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Effects of a Cu(x)O Buffer Layer on a SiO(x)-Based Memory Device in a Vaporless Environment
The resistive switching characteristics of the Cu/SiO(x)/Pt structure (control sample) exhibited a direct correlation to humidity. The H(2)O vapor formed the Cu oxide at the Cu/SiO(x) interface, and Cu ions were injected from the Cu oxide into the SiO(x) layer, thus improving the resistive switching...
| Autores principales: | , |
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| Formato: | Online Artículo Texto |
| Lenguaje: | English |
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Springer US
2015
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| Acceso en línea: | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC4501331/ https://www.ncbi.nlm.nih.gov/pubmed/26168868 http://dx.doi.org/10.1186/s11671-015-1003-3 |