Effects of a Cu(x)O Buffer Layer on a SiO(x)-Based Memory Device in a Vaporless Environment

The resistive switching characteristics of the Cu/SiO(x)/Pt structure (control sample) exhibited a direct correlation to humidity. The H(2)O vapor formed the Cu oxide at the Cu/SiO(x) interface, and Cu ions were injected from the Cu oxide into the SiO(x) layer, thus improving the resistive switching. However, the control sample demonstrated substantial switching dispersion in a vaporless environment. The Cu(x)O layer in the Cu/Cu(x)O/SiO(x)/Pt structure (Cu(x)O sample) helped the dissolution of Cu ions from the Cu electrode into the SiO(x) layer, enabling effective electrochemical resistive switching in a vaporless environment. The Cu(x)O sample exhibited low switching dispersion and favorable endurance characteristics in a vaporless environment.