Cargando…

Effects of a Cu(x)O Buffer Layer on a SiO(x)-Based Memory Device in a Vaporless Environment

The resistive switching characteristics of the Cu/SiO(x)/Pt structure (control sample) exhibited a direct correlation to humidity. The H(2)O vapor formed the Cu oxide at the Cu/SiO(x) interface, and Cu ions were injected from the Cu oxide into the SiO(x) layer, thus improving the resistive switching...

Descripción completa

Detalles Bibliográficos
Autores principales:	Liu, Chih-Yi, Huang, Zheng-Yao
Formato:	Online Artículo Texto
Lenguaje:	English
Publicado:	Springer US 2015
Materias:	Nano Express
Acceso en línea:	https://www.ncbi.nlm.nih.gov/pmc/articles/PMC4501331/ https://www.ncbi.nlm.nih.gov/pubmed/26168868 http://dx.doi.org/10.1186/s11671-015-1003-3

Ejemplares similares

Dual Functions of V/SiO(x)/AlO(y)/p(++)Si Device as Selector and Memory
por: Kim, Sungjun, et al.
Publicado: (2018)

Compositional and optical properties of SiO( x ) films and (SiO( x )/SiO( y )) junctions deposited by HFCVD
por: Vázquez-Valerdi, Diana E, et al.
Publicado: (2014)

Space electric field concentrated effect for Zr:SiO(2) RRAM devices using porous SiO(2) buffer layer
por: Chang, Kuan-Chang, et al.
Publicado: (2013)

Electrical behavior of MIS devices based on Si nanoclusters embedded in SiO(x)N(y )and SiO(2 )films
por: Jacques, Emmanuel, et al.
Publicado: (2011)

Formation of Nanocomposites by Oxidizing Annealing of SiO(x) and SiO(x)<Er,F> Films: Ellipsometry and FTIR Analysis
por: Sopinskyy, Mykola V, et al.
Publicado: (2015)

Analog Switching and Artificial Synaptic Behavior of Ag/SiO(x):Ag/TiO(x)/p(++)-Si Memristor Device
por: Ilyas, Nasir, et al.
Publicado: (2020)

Polarization memory effect in the photoluminescence of nc-Si−SiO(x) light-emitting structures
por: Michailovska, Katerina, et al.
Publicado: (2016)

SiO(x)/SiN(y )multilayers for photovoltaic and photonic applications
por: Nalini, Ramesh Pratibha, et al.
Publicado: (2012)

Theory and simulation of photogeneration and transport in Si-SiO(x )superlattice absorbers
por: Aeberhard, Urs
Publicado: (2011)

Interface properties of SiO(x)N(y) layer on Si prepared by atmospheric-pressure plasma oxidation-nitridation
por: Zhuo, Zeteng, et al.
Publicado: (2013)

Morphological, compositional, structural, and optical properties of Si-nc embedded in SiO(x) films
por: López, J Alberto Luna, et al.
Publicado: (2012)

Current-voltage characteristics in macroporous silicon/SiO(x)/SnO(2):F heterojunctions
por: Garcés, Felipe A, et al.
Publicado: (2012)

Effect of Size-Dependent Thermal Instability on Synthesis of Zn(2) SiO(4)-SiO(x) Core–Shell Nanotube Arrays and Their Cathodoluminescence Properties
por: Li, Chun, et al.
Publicado: (2010)

Influence of embedding Cu nano-particles into a Cu/SiO(2)/Pt structure on its resistive switching
por: Liu, Chih-Yi, et al.
Publicado: (2013)

Enhanced efficiency of inverted polymer solar cells by using solution-processed TiO(x)/CsO(x) cathode buffer layer
por: Zhou, Xiaodong, et al.
Publicado: (2015)

Synthesis, magnetic and optical properties of core/shell Co(1-x)Zn(x)Fe(2)O(4)/SiO(2 )nanoparticles
por: Girgis, Emad, et al.
Publicado: (2011)

Impact of electrically formed interfacial layer and improved memory characteristics of IrO(x)/high-κ(x)/W structures containing AlO(x), GdO(x), HfO(x), and TaO(x) switching materials
por: Prakash, Amit, et al.
Publicado: (2013)

Transformation of sludge Si to nano-Si/SiO(x) structure by oxygen inward diffusion as precursor for high performance anodes in lithium ion batteries
por: Hua, Qiqi, et al.
Publicado: (2018)

Stepwise mechanism and H(2)O-assisted hydrolysis in atomic layer deposition of SiO(2) without a catalyst
por: Fang, Guo-Yong, et al.
Publicado: (2015)

Fabrication of Carbon Nanotube/SiO(2)and Carbon Nanotube/SiO(2)/Ag Nanoparticles Hybrids by Using Plasma Treatment
por: Li, Haiqing, et al.
Publicado: (2009)

A Unique Approach to Generate Self-Aligned SiO(2)/Ge/SiO(2)/SiGe Gate-Stacking Heterostructures in a Single Fabrication Step
por: Lai, Wei-Ting, et al.
Publicado: (2015)

A multilayered approach of Si/SiO to promote carrier transport in electroluminescence of Si nanocrystals
por: Li, Ding, et al.
Publicado: (2012)

Plasmonic Fano resonance and dip of Au-SiO(2)-Au nanomatryoshka
por: Liaw, Jiunn-Woei, et al.
Publicado: (2013)

Advanced Cu chemical displacement technique for SiO(2)-based electrochemical metallization ReRAM application
por: Chin, Fun-Tat, et al.
Publicado: (2014)

Low-Temperature Plasma-Enhanced Atomic Layer Deposition of SiO(2) Using Carbon Dioxide
por: Zhu, Zhen, et al.
Publicado: (2019)

Optical Properties and Sensing Performance of Au/SiO(2) Triangles Arrays on Reflection Au Layer
por: Liu, Xianchao, et al.
Publicado: (2018)

The Polarization Properties of the Reflection Spectra of Single-Layer MoS(2) and ReS(2) on SiO(2)/Si and Quartz Substrates
por: Shi, Yafang, et al.
Publicado: (2020)

Atom Diffusion and Evaporation of Free-Ended Amorphous SiO(x) Nanowires: Nanocurvature Effect and Beam-Induced Athermal Activation Effect
por: Su, Jiangbin, et al.
Publicado: (2016)

Low-Temperature PLD-Growth of Ultrathin ZnO Nanowires by Using Zn(x)Al(1−x)O and Zn(x)Ga(1−x)O Seed Layers
por: Shkurmanov, Alexander, et al.
Publicado: (2017)

FTIR and Raman Spectroscopy of Carbon Nanoparticles in SiO(2), ZnO and NiO Matrices
por: Katumba, G, et al.
Publicado: (2008)

Electromagnetic modeling of waveguide amplifier based on Nd(3+ )Si-rich SiO(2 )layers by means of the ADE-FDTD method
por: Dufour, Christian, et al.
Publicado: (2011)

Hierarchical Cd(4)SiS(6)/SiO(2) Heterostructure Nanowire Arrays
por: Liu, Jian, et al.
Publicado: (2009)

Atomic characterization of Si nanoclusters embedded in SiO(2 )by atom probe tomography
por: Roussel, Manuel, et al.
Publicado: (2011)

Effect of ion implantation energy for the synthesis of Ge nanocrystals in SiN films with HfO(2)/SiO(2 )stack tunnel dielectrics for memory application
por: Sahu, Bhabani Shankar, et al.
Publicado: (2011)

Electronic Structure and Charge-Trapping Characteristics of the Al(2)O(3)-TiAlO-SiO(2) Gate Stack for Nonvolatile Memory Applications
por: Xu, Wenchao, et al.
Publicado: (2017)

Enhanced functionalization of Mn(2)O(3)@SiO(2 )core-shell nanostructures
por: Vaidya, Sonalika, et al.
Publicado: (2011)

Excellent resistive memory characteristics and switching mechanism using a Ti nanolayer at the Cu/TaO(x) interface
por: Rahaman, Sheikh Ziaur, et al.
Publicado: (2012)

TEM and STEM Studies on the Cross-sectional Morphologies of Dual-/Tri-layer Broadband SiO(2) Antireflective Films
por: Wang, Shuangyue, et al.
Publicado: (2018)

Low-Power Resistive Switching Characteristic in HfO(2)/TiO(x) Bi-Layer Resistive Random-Access Memory
por: Ding, Xiangxiang, et al.
Publicado: (2019)

Characterization of ultrathin InSb nanocrystals film deposited on SiO(2)/Si substrate
por: Li, Dengyue, et al.
Publicado: (2011)

Cannot write session to /tmp/vufind_sessions/sess_j346s50if3npd45kmk44hsv33n