Capacitance-Voltage Characteristics of Thin-film Transistors Fabricated with Solution-Processed Semiconducting Carbon Nanotube Networks

We report the capacitance-voltage (C-V) measurements on thin-film transistors (TFTs) using solution-processed semiconducting carbon nanotube networks with different densities and channel lengths. From the measured C-V characteristics, gate capacitance and field-effect mobility (up to ~50 cm(2) V(−1)...

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Detalles Bibliográficos
Autores principales: Cai, Le, Zhang, Suoming, Miao, Jinshui, Wei, Qinqin, Wang, Chuan
Formato: Online Artículo Texto
Lenguaje:English
Publicado: Springer US 2015
Materias:
Nano Express
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC4501368/
https://www.ncbi.nlm.nih.gov/pubmed/26168866
http://dx.doi.org/10.1186/s11671-015-0999-8

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC4501368/
https://www.ncbi.nlm.nih.gov/pubmed/26168866
http://dx.doi.org/10.1186/s11671-015-0999-8

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