Evidence for Kinetic Limitations as a Controlling Factor of Ge Pyramid Formation: a Study of Structural Features of Ge/Si(001) Wetting Layer Formed by Ge Deposition at Room Temperature Followed by Annealing at 600 °C

The article presents an experimental study of an issue of whether the formation of arrays of Ge quantum dots on the Si(001) surface is an equilibrium process or it is kinetically controlled. We deposited Ge on Si(001) at the room temperature and explored crystallization of the disordered Ge film as...

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Detalles Bibliográficos
Autores principales: Storozhevykh, Mikhail S., Arapkina, Larisa V., Yuryev, Vladimir A.
Formato: Online Artículo Texto
Lenguaje:English
Publicado: Springer US 2015
Materias:
Nano Express
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC4503702/
https://www.ncbi.nlm.nih.gov/pubmed/26177602
http://dx.doi.org/10.1186/s11671-015-0994-0

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC4503702/
https://www.ncbi.nlm.nih.gov/pubmed/26177602
http://dx.doi.org/10.1186/s11671-015-0994-0

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