Electronic Structure of Low-Temperature Solution-Processed Amorphous Metal Oxide Semiconductors for Thin-Film Transistor Applications

The electronic structure of low temperature, solution-processed indium–zinc oxide thin-film transistors is complex and remains insufficiently understood. As commonly observed, high device performance with mobility >1 cm(2) V(−1) s(−1) is achievable after annealing in air above typically 250 °C bu...

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Detalles Bibliográficos
Autores principales: Socratous, Josephine, Banger, Kulbinder K, Vaynzof, Yana, Sadhanala, Aditya, Brown, Adam D, Sepe, Alessandro, Steiner, Ullrich, Sirringhaus, Henning
Formato: Online Artículo Texto
Lenguaje:English
Publicado: BlackWell Publishing Ltd 2015
Materias:
Full Papers
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC4503976/
https://www.ncbi.nlm.nih.gov/pubmed/26190964
http://dx.doi.org/10.1002/adfm.201404375

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC4503976/
https://www.ncbi.nlm.nih.gov/pubmed/26190964
http://dx.doi.org/10.1002/adfm.201404375

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