Active charge state control of single NV centres in diamond by in-plane Al-Schottky junctions

In this paper, we demonstrate an active control of the charge state of a single nitrogen-vacancy (NV) centre by using in-plane Schottky-diode geometries with aluminium on hydrogen-terminated diamond surface. A switching between NV(+), NV(0) and NV(−) can be performed with the Al-gates which apply el...

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Detalles Bibliográficos
Autores principales: Schreyvogel, C., Polyakov, V., Wunderlich, R., Meijer, J., Nebel, C. E.
Formato: Online Artículo Texto
Lenguaje:English
Publicado: Nature Publishing Group 2015
Materias:
Article
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC4503995/
https://www.ncbi.nlm.nih.gov/pubmed/26177799
http://dx.doi.org/10.1038/srep12160

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC4503995/
https://www.ncbi.nlm.nih.gov/pubmed/26177799
http://dx.doi.org/10.1038/srep12160

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