Switching Behaviors of Graphene-Boron Nitride Nanotube Heterojunctions

High electron mobility of graphene has enabled their application in high-frequency analogue devices but their gapless nature has hindered their use in digital switches. In contrast, the structural analogous, h-BN sheets and BN nanotubes (BNNTs) are wide band gap insulators. Here we show that the gro...

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Detalles Bibliográficos
Autores principales: Parashar, Vyom, Durand, Corentin P., Hao, Boyi, Amorim, Rodrigo G., Pandey, Ravindra, Tiwari, Bishnu, Zhang, Dongyan, Liu, Yang, Li, An-Ping, Yap, Yoke Khin
Formato: Online Artículo Texto
Lenguaje:English
Publicado: Nature Publishing Group 2015
Materias:
Article
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC4507443/
https://www.ncbi.nlm.nih.gov/pubmed/26192733
http://dx.doi.org/10.1038/srep12238

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC4507443/
https://www.ncbi.nlm.nih.gov/pubmed/26192733
http://dx.doi.org/10.1038/srep12238

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