Amorphous Silicon p-i-n Structure Acting as Light and Temperature Sensor

In this work, we propose a multi-parametric sensor able to measure both temperature and radiation intensity, suitable to increase the level of integration and miniaturization in Lab-on-Chip applications. The device is based on amorphous silicon p-doped/intrinsic/n-doped thin film junction. The devic...

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Detalles Bibliográficos
Autores principales: de Cesare, Giampiero, Nascetti, Augusto, Caputo, Domenico
Formato: Online Artículo Texto
Lenguaje:English
Publicado: MDPI 2015
Materias:
Article
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC4507708/
https://www.ncbi.nlm.nih.gov/pubmed/26016913
http://dx.doi.org/10.3390/s150612260

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC4507708/
https://www.ncbi.nlm.nih.gov/pubmed/26016913
http://dx.doi.org/10.3390/s150612260

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