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Amorphous Silicon p-i-n Structure Acting as Light and Temperature Sensor
In this work, we propose a multi-parametric sensor able to measure both temperature and radiation intensity, suitable to increase the level of integration and miniaturization in Lab-on-Chip applications. The device is based on amorphous silicon p-doped/intrinsic/n-doped thin film junction. The devic...
| Autores principales: | , , |
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| Formato: | Online Artículo Texto |
| Lenguaje: | English |
| Publicado: |
MDPI
2015
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| Materias: | |
| Acceso en línea: | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC4507708/ https://www.ncbi.nlm.nih.gov/pubmed/26016913 http://dx.doi.org/10.3390/s150612260 |