Low defect large area semi-polar (11[Image: see text]2) GaN grown on patterned (113) silicon

We report on the growth of semi-polar GaN (11[Image: see text]2) templates on patterned Si (113) substrates. Trenches were etched in Si (113) using KOH to expose Si {111} sidewalls. Subsequently an AlN layer to prevent meltback etching, an AlGaN layer for stress management, and finally two GaN layer...

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Detalles Bibliográficos
Autores principales: Pristovsek, Markus, Han, Yisong, Zhu, Tongtong, Frentrup, Martin, Kappers, Menno J, Humphreys, Colin J, Kozlowski, Grzegorz, Maaskant, Pleun, Corbett, Brian
Formato: Online Artículo Texto
Lenguaje:English
Publicado: Blackwell Publishing Ltd 2015
Materias:
Original Papers
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC4511389/
https://www.ncbi.nlm.nih.gov/pubmed/26212392
http://dx.doi.org/10.1002/pssb.201451591

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC4511389/
https://www.ncbi.nlm.nih.gov/pubmed/26212392
http://dx.doi.org/10.1002/pssb.201451591

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