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Low defect large area semi-polar (11[Image: see text]2) GaN grown on patterned (113) silicon
We report on the growth of semi-polar GaN (11[Image: see text]2) templates on patterned Si (113) substrates. Trenches were etched in Si (113) using KOH to expose Si {111} sidewalls. Subsequently an AlN layer to prevent meltback etching, an AlGaN layer for stress management, and finally two GaN layer...
| Autores principales: | , , , , , , , , |
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| Formato: | Online Artículo Texto |
| Lenguaje: | English |
| Publicado: |
Blackwell Publishing Ltd
2015
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| Materias: | |
| Acceso en línea: | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC4511389/ https://www.ncbi.nlm.nih.gov/pubmed/26212392 http://dx.doi.org/10.1002/pssb.201451591 |