Rogue waves lead to the instability in GaN semiconductors

A new approach to understand the electron/hole interfaced plasma in GaN high electron mobility transistors (HEMTs). A quantum hydrodynamic model is constructed to include electrons/holes degenerate pressure, Bohm potential, and the exchange/correlation effect and then reduced to the nonlinear Schröd...

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Detalles Bibliográficos
Autores principales: Yahia, M. E., Tolba, R. E., El-Bedwehy, N. A., El-Labany, S. K., Moslem, W. M.
Formato: Online Artículo Texto
Lenguaje:English
Publicado: Nature Publishing Group 2015
Materias:
Article
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC4513275/
https://www.ncbi.nlm.nih.gov/pubmed/26206731
http://dx.doi.org/10.1038/srep12245

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC4513275/
https://www.ncbi.nlm.nih.gov/pubmed/26206731
http://dx.doi.org/10.1038/srep12245

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