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Rogue waves lead to the instability in GaN semiconductors

A new approach to understand the electron/hole interfaced plasma in GaN high electron mobility transistors (HEMTs). A quantum hydrodynamic model is constructed to include electrons/holes degenerate pressure, Bohm potential, and the exchange/correlation effect and then reduced to the nonlinear Schröd...

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Detalles Bibliográficos
Autores principales: Yahia, M. E., Tolba, R. E., El-Bedwehy, N. A., El-Labany, S. K., Moslem, W. M.
Formato: Online Artículo Texto
Lenguaje:English
Publicado: Nature Publishing Group 2015
Materias:
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC4513275/
https://www.ncbi.nlm.nih.gov/pubmed/26206731
http://dx.doi.org/10.1038/srep12245
Descripción
Sumario:A new approach to understand the electron/hole interfaced plasma in GaN high electron mobility transistors (HEMTs). A quantum hydrodynamic model is constructed to include electrons/holes degenerate pressure, Bohm potential, and the exchange/correlation effect and then reduced to the nonlinear Schrödinger equation (NLSE). Numerical analysis of the latter predicts the rough (in)stability domains, which allow for the rogue waves to occur. Our results might give physical solution rather than the engineering one to the intrinsic problems in these high frequency/power transistors.