Rogue waves lead to the instability in GaN semiconductors

A new approach to understand the electron/hole interfaced plasma in GaN high electron mobility transistors (HEMTs). A quantum hydrodynamic model is constructed to include electrons/holes degenerate pressure, Bohm potential, and the exchange/correlation effect and then reduced to the nonlinear Schröd...

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Autores principales: Yahia, M. E., Tolba, R. E., El-Bedwehy, N. A., El-Labany, S. K., Moslem, W. M.
Formato: Online Artículo Texto
Lenguaje:English
Publicado: Nature Publishing Group 2015
Materias:
Article
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC4513275/
https://www.ncbi.nlm.nih.gov/pubmed/26206731
http://dx.doi.org/10.1038/srep12245
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author Yahia, M. E.
Tolba, R. E.
El-Bedwehy, N. A.
El-Labany, S. K.
Moslem, W. M.
author_facet Yahia, M. E.
Tolba, R. E.
El-Bedwehy, N. A.
El-Labany, S. K.
Moslem, W. M.
author_sort Yahia, M. E.
collection PubMed
description A new approach to understand the electron/hole interfaced plasma in GaN high electron mobility transistors (HEMTs). A quantum hydrodynamic model is constructed to include electrons/holes degenerate pressure, Bohm potential, and the exchange/correlation effect and then reduced to the nonlinear Schrödinger equation (NLSE). Numerical analysis of the latter predicts the rough (in)stability domains, which allow for the rogue waves to occur. Our results might give physical solution rather than the engineering one to the intrinsic problems in these high frequency/power transistors.
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spelling pubmed-45132752015-07-29 Rogue waves lead to the instability in GaN semiconductors Yahia, M. E. Tolba, R. E. El-Bedwehy, N. A. El-Labany, S. K. Moslem, W. M. Sci Rep Article A new approach to understand the electron/hole interfaced plasma in GaN high electron mobility transistors (HEMTs). A quantum hydrodynamic model is constructed to include electrons/holes degenerate pressure, Bohm potential, and the exchange/correlation effect and then reduced to the nonlinear Schrödinger equation (NLSE). Numerical analysis of the latter predicts the rough (in)stability domains, which allow for the rogue waves to occur. Our results might give physical solution rather than the engineering one to the intrinsic problems in these high frequency/power transistors. Nature Publishing Group 2015-07-24 /pmc/articles/PMC4513275/ /pubmed/26206731 http://dx.doi.org/10.1038/srep12245 Text en Copyright © 2015, Macmillan Publishers Limited http://creativecommons.org/licenses/by/4.0/ This work is licensed under a Creative Commons Attribution 4.0 International License. The images or other third party material in this article are included in the article’s Creative Commons license, unless indicated otherwise in the credit line; if the material is not included under the Creative Commons license, users will need to obtain permission from the license holder to reproduce the material. To view a copy of this license, visit http://creativecommons.org/licenses/by/4.0/
spellingShingle Article
Yahia, M. E.
Tolba, R. E.
El-Bedwehy, N. A.
El-Labany, S. K.
Moslem, W. M.
Rogue waves lead to the instability in GaN semiconductors
title Rogue waves lead to the instability in GaN semiconductors
title_full Rogue waves lead to the instability in GaN semiconductors
title_fullStr Rogue waves lead to the instability in GaN semiconductors
title_full_unstemmed Rogue waves lead to the instability in GaN semiconductors
title_short Rogue waves lead to the instability in GaN semiconductors
title_sort rogue waves lead to the instability in gan semiconductors
topic Article
url https://www.ncbi.nlm.nih.gov/pmc/articles/PMC4513275/
https://www.ncbi.nlm.nih.gov/pubmed/26206731
http://dx.doi.org/10.1038/srep12245
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