Electrical, structural, and optical properties of sulfurized Sn-doped In(2)O(3) nanowires

Sn-doped In(2)O(3) nanowires have been grown on Si via the vapor-liquid-solid mechanism at 800 °C and then exposed to H(2)S between 300 to 600 °C. We observe the existence of cubic bixbyite In(2)O(3) and hexagonal SnS(2) after processing the Sn:In(2)O(3) nanowires to H(2)S at 300 °C but also cubic b...

Descripción completa

Detalles Bibliográficos
Autores principales: Zervos, M., Mihailescu, C. N., Giapintzakis, J., Othonos, A., Travlos, A., Luculescu, C. R.
Formato: Online Artículo Texto
Lenguaje:English
Publicado: Springer US 2015
Materias:
Nano Express
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC4522004/
https://www.ncbi.nlm.nih.gov/pubmed/26231685
http://dx.doi.org/10.1186/s11671-015-0995-z

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC4522004/
https://www.ncbi.nlm.nih.gov/pubmed/26231685
http://dx.doi.org/10.1186/s11671-015-0995-z

Ejemplares similares