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Three-Dimensional Porous Copper-Graphene Heterostructures with Durability and High Heat Dissipation Performance

Porous materials have historically been of interest for a wide range of applications in thermal management, for example, in heat exchangers and thermal barriers. Rapid progress in electronic and optoelectronic technology necessitates more efficient spreading and dissipation of the heat generated in...

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Detalles Bibliográficos
Autores principales: Rho, Hokyun, Lee, Seungmin, Bae, Sukang, Kim, Tae-Wook, Su Lee, Dong, Jung Lee, Hyun, Yeon Hwang, Jun, Jeong, Tak, Kim, Sungmin, Ha, Jun-Seok, Hyun Lee, Sang
Formato: Online Artículo Texto
Lenguaje:English
Publicado: Nature Publishing Group 2015
Materias:
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC4522598/
https://www.ncbi.nlm.nih.gov/pubmed/26234425
http://dx.doi.org/10.1038/srep12710
Descripción
Sumario:Porous materials have historically been of interest for a wide range of applications in thermal management, for example, in heat exchangers and thermal barriers. Rapid progress in electronic and optoelectronic technology necessitates more efficient spreading and dissipation of the heat generated in these devices, calling for the development of new thermal management materials. Here, we report an effective technique for the synthesis of porous Cu-graphene heterostructures with pores of about 30 μm and a porosity of 35%. Graphene layers were grown on the surfaces of porous Cu, which was formed via the coalescence of molten Cu microparticles. The surface passivation with graphene layers resulted in a thermal conductivity higher than that of porous Cu, especially at high temperatures (approximately 40% at 1173 K). The improved heat dissipation properties of the porous structures were demonstrated by analysis of the thermal resistance and temperature distribution of LED chips mounted on the structures. The effective combination of the structural and material properties of porous Cu-graphene heterostructures provides a new material for effective thermal management of high-power electronic and optoelectronic devices.