Low-field Switching Four-state Nonvolatile Memory Based on Multiferroic Tunnel Junctions

Multiferroic tunneling junction based four-state non-volatile memories are very promising for future memory industry since this kind of memories hold the advantages of not only the higher density by scaling down memory cell but also the function of magnetically written and electrically reading. In t...

Descripción completa

Detalles Bibliográficos
Autores principales: Yau, H. M., Yan, Z. B., Chan, N. Y., Au, K., Wong, C. M., Leung, C. W., Zhang, F.Y., Gao, X. S., Dai, J. Y.
Formato: Online Artículo Texto
Lenguaje:English
Publicado: Nature Publishing Group 2015
Materias:
Article
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC4523833/
https://www.ncbi.nlm.nih.gov/pubmed/26239505
http://dx.doi.org/10.1038/srep12826

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC4523833/
https://www.ncbi.nlm.nih.gov/pubmed/26239505
http://dx.doi.org/10.1038/srep12826

Ejemplares similares