Low-field Switching Four-state Nonvolatile Memory Based on Multiferroic Tunnel Junctions

Multiferroic tunneling junction based four-state non-volatile memories are very promising for future memory industry since this kind of memories hold the advantages of not only the higher density by scaling down memory cell but also the function of magnetically written and electrically reading. In t...

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Autores principales: Yau, H. M., Yan, Z. B., Chan, N. Y., Au, K., Wong, C. M., Leung, C. W., Zhang, F.Y., Gao, X. S., Dai, J. Y.
Formato: Online Artículo Texto
Lenguaje:English
Publicado: Nature Publishing Group 2015
Materias:
Article
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC4523833/
https://www.ncbi.nlm.nih.gov/pubmed/26239505
http://dx.doi.org/10.1038/srep12826
_version_ 1782384120753553408
author Yau, H. M.
Yan, Z. B.
Chan, N. Y.
Au, K.
Wong, C. M.
Leung, C. W.
Zhang, F.Y.
Gao, X. S.
Dai, J. Y.
author_facet Yau, H. M.
Yan, Z. B.
Chan, N. Y.
Au, K.
Wong, C. M.
Leung, C. W.
Zhang, F.Y.
Gao, X. S.
Dai, J. Y.
author_sort Yau, H. M.
collection PubMed
description Multiferroic tunneling junction based four-state non-volatile memories are very promising for future memory industry since this kind of memories hold the advantages of not only the higher density by scaling down memory cell but also the function of magnetically written and electrically reading. In this work, we demonstrate a success of this four-state memory in a material system of NiFe/BaTiO(3)/La(0.7)Sr(0.3)MnO(3) with improved memory characteristics such as lower switching field and larger tunneling magnetoresistance (TMR). Ferroelectric switching induced resistive change memory with OFF/ON ratio of 16 and 0.3% TMR effect have been achieved in this multiferroic tunneling structure.
format Online
Article
Text
id pubmed-4523833
institution National Center for Biotechnology Information
language English
publishDate 2015
publisher Nature Publishing Group
record_format MEDLINE/PubMed
spelling pubmed-45238332015-08-05 Low-field Switching Four-state Nonvolatile Memory Based on Multiferroic Tunnel Junctions Yau, H. M. Yan, Z. B. Chan, N. Y. Au, K. Wong, C. M. Leung, C. W. Zhang, F.Y. Gao, X. S. Dai, J. Y. Sci Rep Article Multiferroic tunneling junction based four-state non-volatile memories are very promising for future memory industry since this kind of memories hold the advantages of not only the higher density by scaling down memory cell but also the function of magnetically written and electrically reading. In this work, we demonstrate a success of this four-state memory in a material system of NiFe/BaTiO(3)/La(0.7)Sr(0.3)MnO(3) with improved memory characteristics such as lower switching field and larger tunneling magnetoresistance (TMR). Ferroelectric switching induced resistive change memory with OFF/ON ratio of 16 and 0.3% TMR effect have been achieved in this multiferroic tunneling structure. Nature Publishing Group 2015-08-04 /pmc/articles/PMC4523833/ /pubmed/26239505 http://dx.doi.org/10.1038/srep12826 Text en Copyright © 2015, Macmillan Publishers Limited http://creativecommons.org/licenses/by/4.0/ This work is licensed under a Creative Commons Attribution 4.0 International License. The images or other third party material in this article are included in the article’s Creative Commons license, unless indicated otherwise in the credit line; if the material is not included under the Creative Commons license, users will need to obtain permission from the license holder to reproduce the material. To view a copy of this license, visit http://creativecommons.org/licenses/by/4.0/
spellingShingle Article
Yau, H. M.
Yan, Z. B.
Chan, N. Y.
Au, K.
Wong, C. M.
Leung, C. W.
Zhang, F.Y.
Gao, X. S.
Dai, J. Y.
Low-field Switching Four-state Nonvolatile Memory Based on Multiferroic Tunnel Junctions
title Low-field Switching Four-state Nonvolatile Memory Based on Multiferroic Tunnel Junctions
title_full Low-field Switching Four-state Nonvolatile Memory Based on Multiferroic Tunnel Junctions
title_fullStr Low-field Switching Four-state Nonvolatile Memory Based on Multiferroic Tunnel Junctions
title_full_unstemmed Low-field Switching Four-state Nonvolatile Memory Based on Multiferroic Tunnel Junctions
title_short Low-field Switching Four-state Nonvolatile Memory Based on Multiferroic Tunnel Junctions
title_sort low-field switching four-state nonvolatile memory based on multiferroic tunnel junctions
topic Article
url https://www.ncbi.nlm.nih.gov/pmc/articles/PMC4523833/
https://www.ncbi.nlm.nih.gov/pubmed/26239505
http://dx.doi.org/10.1038/srep12826
work_keys_str_mv AT yauhm lowfieldswitchingfourstatenonvolatilememorybasedonmultiferroictunneljunctions
AT yanzb lowfieldswitchingfourstatenonvolatilememorybasedonmultiferroictunneljunctions
AT channy lowfieldswitchingfourstatenonvolatilememorybasedonmultiferroictunneljunctions
AT auk lowfieldswitchingfourstatenonvolatilememorybasedonmultiferroictunneljunctions
AT wongcm lowfieldswitchingfourstatenonvolatilememorybasedonmultiferroictunneljunctions
AT leungcw lowfieldswitchingfourstatenonvolatilememorybasedonmultiferroictunneljunctions
AT zhangfy lowfieldswitchingfourstatenonvolatilememorybasedonmultiferroictunneljunctions
AT gaoxs lowfieldswitchingfourstatenonvolatilememorybasedonmultiferroictunneljunctions
AT daijy lowfieldswitchingfourstatenonvolatilememorybasedonmultiferroictunneljunctions

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