Epitaxial diamond-hexagonal silicon nano-ribbon growth on (001) silicon

Silicon crystallizes in the diamond-cubic phase and shows only a weak emission at 1.1 eV. Diamond-hexagonal silicon however has an indirect bandgap at 1.5 eV and has therefore potential for application in opto-electronic devices. Here we discuss a method based on advanced silicon device processing t...

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Detalles Bibliográficos
Autores principales: Qiu, Y., Bender, H., Richard, O., Kim, M.-S., Van Besien, E., Vos, I., de Potter de ten Broeck, M., Mocuta, D., Vandervorst, W.
Formato: Online Artículo Texto
Lenguaje:English
Publicado: Nature Publishing Group 2015
Materias:
Article
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC4523848/
https://www.ncbi.nlm.nih.gov/pubmed/26239286
http://dx.doi.org/10.1038/srep12692

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC4523848/
https://www.ncbi.nlm.nih.gov/pubmed/26239286
http://dx.doi.org/10.1038/srep12692

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