Trimethylaluminum and Oxygen Atomic Layer Deposition on Hydroxyl-Free Cu(111)

[Image: see text] Atomic layer deposition (ALD) of alumina using trimethylaluminum (TMA) has technological importance in microelectronics. This process has demonstrated a high potential in applications of protective coatings on Cu surfaces for control of diffusion of Cu in Cu(2)S films in photovolta...

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Detalles Bibliográficos
Autores principales: Gharachorlou, Amir, Detwiler, Michael D., Gu, Xiang-Kui, Mayr, Lukas, Klötzer, Bernhard, Greeley, Jeffrey, Reifenberger, Ronald G., Delgass, W. Nicholas, Ribeiro, Fabio H., Zemlyanov, Dmitry Y.
Formato: Online Artículo Texto
Lenguaje:English
Publicado: American Chemical Society 2015
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC4528256/
https://www.ncbi.nlm.nih.gov/pubmed/26158796
http://dx.doi.org/10.1021/acsami.5b03598

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC4528256/
https://www.ncbi.nlm.nih.gov/pubmed/26158796
http://dx.doi.org/10.1021/acsami.5b03598

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