Effects of Energy Relaxation via Quantum Coupling Among Three-Dimensional Motion on the Tunneling Current of Graphene Field-Effect Transistors

We report theoretical study of the effects of energy relaxation on the tunneling current through the oxide layer of a two-dimensional graphene field-effect transistor. In the channel, when three-dimensional electron thermal motion is considered in the Schrödinger equation, the gate leakage current a...

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Detalles Bibliográficos
Autores principales: Mao, Ling-Feng, Ning, Huansheng, Li, Xijun
Formato: Online Artículo Texto
Lenguaje:English
Publicado: Springer US 2015
Materias:
Nano Express
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC4531885/
https://www.ncbi.nlm.nih.gov/pubmed/26264688
http://dx.doi.org/10.1186/s11671-015-1039-4

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC4531885/
https://www.ncbi.nlm.nih.gov/pubmed/26264688
http://dx.doi.org/10.1186/s11671-015-1039-4

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