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High-performance n-type black phosphorus transistors with type control via thickness and contact-metal engineering
Recent work has demonstrated excellent p-type field-effect switching in exfoliated black phosphorus, but type control has remained elusive. Here, we report unipolar n-type black phosphorus transistors with switching polarity control via contact-metal engineering and flake thickness, combined with ox...
| Autores principales: | , , , |
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| Formato: | Online Artículo Texto |
| Lenguaje: | English |
| Publicado: |
Nature Pub. Group
2015
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| Materias: | |
| Acceso en línea: | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC4532797/ https://www.ncbi.nlm.nih.gov/pubmed/26223778 http://dx.doi.org/10.1038/ncomms8809 |