Free and bound excitonic effects in Al(0.5)Ga(0.5)N/Al(0.35)Ga(0.65)N MQWs with different Si-doping levels in the well layers

Free exciton (FX) and bound exciton (BX) in Al(0.5)Ga(0.5)N/Al(0.35)Ga(0.65)N multiple quantum wells (MQWs) with different Si-doping levels in the well layers are investigated by photoluminescence (PL) spectra. Low temperature (10 K) PL spectra identify a large binding energy of 87.4 meV for the BX...

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Detalles Bibliográficos
Autores principales: He, Chenguang, Qin, Zhixin, Xu, Fujun, Hou, Mengjun, Zhang, Shan, Zhang, Lisheng, Wang, Xinqiang, Ge, Weikun, Shen, Bo
Formato: Online Artículo Texto
Lenguaje:English
Publicado: Nature Publishing Group 2015
Materias:
Article
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC4533523/
https://www.ncbi.nlm.nih.gov/pubmed/26267249
http://dx.doi.org/10.1038/srep13046

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC4533523/
https://www.ncbi.nlm.nih.gov/pubmed/26267249
http://dx.doi.org/10.1038/srep13046

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