Fabrication of Straight Silicon Nanowires and Their Conductive Properties

Straight Si nanowires (Si NWs) with tens to hundreds of micrometers in length and 40–200 nm in diameter are achieved by annealing a Si substrate coated with metallic Fe. The influences of annealing gas and temperature on the formation of Si NWs are investigated. It is found that the annealing gas ha...

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Detalles Bibliográficos
Autores principales: Wu, S., Shao, Y. M., Nie, T. X., Xu, L., Jiang, Z. M., Yang, X. J.
Formato: Online Artículo Texto
Lenguaje:English
Publicado: Springer US 2015
Materias:
Nano Express
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC4534481/
https://www.ncbi.nlm.nih.gov/pubmed/26269253
http://dx.doi.org/10.1186/s11671-015-1025-x

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC4534481/
https://www.ncbi.nlm.nih.gov/pubmed/26269253
http://dx.doi.org/10.1186/s11671-015-1025-x

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