Cargando…
Fabrication of Straight Silicon Nanowires and Their Conductive Properties
Straight Si nanowires (Si NWs) with tens to hundreds of micrometers in length and 40–200 nm in diameter are achieved by annealing a Si substrate coated with metallic Fe. The influences of annealing gas and temperature on the formation of Si NWs are investigated. It is found that the annealing gas ha...
| Autores principales: | , , , , , |
|---|---|
| Formato: | Online Artículo Texto |
| Lenguaje: | English |
| Publicado: |
Springer US
2015
|
| Materias: | |
| Acceso en línea: | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC4534481/ https://www.ncbi.nlm.nih.gov/pubmed/26269253 http://dx.doi.org/10.1186/s11671-015-1025-x |