Employing Si solar cell technology to increase efficiency of ultra-thin Cu(In,Ga)Se(2) solar cells

Reducing absorber layer thickness below 500 nm in regular Cu(In,Ga)Se(2) (CIGS) solar cells decreases cell efficiency considerably, as both short-circuit current and open-circuit voltage are reduced because of incomplete absorption and high Mo/CIGS rear interface recombination. In this work, an inno...

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Detalles Bibliográficos
Autores principales: Vermang, Bart, Wätjen, Jörn Timo, Fjällström, Viktor, Rostvall, Fredrik, Edoff, Marika, Kotipalli, Ratan, Henry, Frederic, Flandre, Denis
Formato: Online Artículo Texto
Lenguaje:English
Publicado: BlackWell Publishing Ltd 2014
Materias:
Accelerated Publications
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC4540152/
https://www.ncbi.nlm.nih.gov/pubmed/26300619
http://dx.doi.org/10.1002/pip.2527

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC4540152/
https://www.ncbi.nlm.nih.gov/pubmed/26300619
http://dx.doi.org/10.1002/pip.2527

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