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Top-Down CMOS-NEMS Polysilicon Nanowire with Piezoresistive Transduction
A top-down clamped-clamped beam integrated in a CMOS technology with a cross section of 500 nm × 280 nm has been electrostatic actuated and sensed using two different transduction methods: capacitive and piezoresistive. The resonator made from a single polysilicon layer has a fundamental in-plane re...
| Autores principales: | , , , , |
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| Formato: | Online Artículo Texto |
| Lenguaje: | English |
| Publicado: |
MDPI
2015
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| Materias: | |
| Acceso en línea: | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC4541920/ https://www.ncbi.nlm.nih.gov/pubmed/26184222 http://dx.doi.org/10.3390/s150717036 |