All oxide semiconductor-based bidirectional vertical p-n-p selectors for 3D stackable crossbar-array electronics

Three-dimensional (3D) stackable memory devices including nano-scaled crossbar array are central for the realization of high-density non-volatile memory electronics. However, an essential sneak path issue affecting device performance in crossbar array remains a bottleneck and a grand challenge. Ther...

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Detalles Bibliográficos
Autores principales: Bae, Yoon Cheol, Lee, Ah Rahm, Baek, Gwang Ho, Chung, Je Bock, Kim, Tae Yoon, Park, Jea Gun, Hong, Jin Pyo
Formato: Online Artículo Texto
Lenguaje:English
Publicado: Nature Publishing Group 2015
Materias:
Article
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC4542327/
https://www.ncbi.nlm.nih.gov/pubmed/26289565
http://dx.doi.org/10.1038/srep13362

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC4542327/
https://www.ncbi.nlm.nih.gov/pubmed/26289565
http://dx.doi.org/10.1038/srep13362

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