Cargando…
All oxide semiconductor-based bidirectional vertical p-n-p selectors for 3D stackable crossbar-array electronics
Three-dimensional (3D) stackable memory devices including nano-scaled crossbar array are central for the realization of high-density non-volatile memory electronics. However, an essential sneak path issue affecting device performance in crossbar array remains a bottleneck and a grand challenge. Ther...
| Autores principales: | , , , , , , |
|---|---|
| Formato: | Online Artículo Texto |
| Lenguaje: | English |
| Publicado: |
Nature Publishing Group
2015
|
| Materias: | |
| Acceso en línea: | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC4542327/ https://www.ncbi.nlm.nih.gov/pubmed/26289565 http://dx.doi.org/10.1038/srep13362 |