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Silicon Metal-oxide-semiconductor Quantum Dots for Single-electron Pumping
As mass-produced silicon transistors have reached the nano-scale, their behavior and performances are increasingly affected, and often deteriorated, by quantum mechanical effects such as tunneling through single dopants, scattering via interface defects, and discrete trap charge states. However, pro...
| Autores principales: | , , , , , |
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| Formato: | Online Artículo Texto |
| Lenguaje: | English |
| Publicado: |
MyJove Corporation
2015
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| Materias: | |
| Acceso en línea: | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC4544770/ https://www.ncbi.nlm.nih.gov/pubmed/26067215 http://dx.doi.org/10.3791/52852 |