Numerical simulation of ISFET structures for biosensing devices with TCAD tools

BACKGROUND: Ion Sensitive Field Effect Transistors (ISFETs) are one of the primitive structures for the fabrication of biosensors (BioFETs). Aiming at the optimization of the design and fabrication processes of BioFETs, the correlation between technological parameters and device electrical response...

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Detalles Bibliográficos
Autores principales: Passeri, Daniele, Morozzi, Arianna, Kanxheri, Keida, Scorzoni, Andrea
Formato: Online Artículo Texto
Lenguaje:English
Publicado: BioMed Central 2015
Materias:
Research
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC4547192/
https://www.ncbi.nlm.nih.gov/pubmed/26329255
http://dx.doi.org/10.1186/1475-925X-14-S2-S3

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC4547192/
https://www.ncbi.nlm.nih.gov/pubmed/26329255
http://dx.doi.org/10.1186/1475-925X-14-S2-S3

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