CMOS-Compatible Top-Down Fabrication of Periodic SiO(2) Nanostructures using a Single Mask

We propose a CMOS-compatible top-down fabrication technique of highly-ordered and periodic SiO(2) nanostructures using a single amorphous silicon (α-Si) mask layer. The α-Si mask pattern is precisely transferred into the underlying SiO(2) substrate material with a high fidelity by a novel top-down f...

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Detalles Bibliográficos
Autores principales: Meng, Lingkuan, Gao, Jianfeng, He, Xiaobin, Li, Junjie, Wei, Yayi, Yan, Jiang
Formato: Online Artículo Texto
Lenguaje:English
Publicado: Springer US 2015
Materias:
Nano Express
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC4549353/
https://www.ncbi.nlm.nih.gov/pubmed/26306538
http://dx.doi.org/10.1186/s11671-015-1046-5

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC4549353/
https://www.ncbi.nlm.nih.gov/pubmed/26306538
http://dx.doi.org/10.1186/s11671-015-1046-5

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