Temperature-Dependent Asymmetry of Anisotropic Magnetoresistance in Silicon p-n Junctions

We report a large but asymmetric magnetoresistance in silicon p-n junctions, which contrasts with the fact of magnetoresistance being symmetric in magnetic metals and semiconductors. With temperature decreasing from 293 K to 100 K, the magnetoresistance sharply increases from 50% to 150% under a mag...

Descripción completa

Detalles Bibliográficos
Autores principales: Yang, D. Z., Wang, T., Sui, W. B., Si, M. S., Guo, D. W., Shi, Z., Wang, F. C., Xue, D. S.
Formato: Online Artículo Texto
Lenguaje:English
Publicado: Nature Publishing Group 2015
Materias:
Article
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC4555100/
https://www.ncbi.nlm.nih.gov/pubmed/26323495
http://dx.doi.org/10.1038/srep11096

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC4555100/
https://www.ncbi.nlm.nih.gov/pubmed/26323495
http://dx.doi.org/10.1038/srep11096

Ejemplares similares