Ultraviolet Lasers Realized via Electrostatic Doping Method

P-type doping of wide-bandgap semiconductors has long been a challenging issue for the relatively large activation energy and strong compensation of acceptor states in these materials, which hinders their applications in ultraviolet (UV) optoelectronic devices drastically. Here we show that by emplo...

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Detalles Bibliográficos
Autores principales: Liu, X. Y., Shan, C. X., Zhu, H., Li, B. H., Jiang, M. M., Yu, S. F., Shen, D. Z.
Formato: Online Artículo Texto
Lenguaje:English
Publicado: Nature Publishing Group 2015
Materias:
Article
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC4555170/
https://www.ncbi.nlm.nih.gov/pubmed/26324054
http://dx.doi.org/10.1038/srep13641

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC4555170/
https://www.ncbi.nlm.nih.gov/pubmed/26324054
http://dx.doi.org/10.1038/srep13641

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