Ultraviolet Lasers Realized via Electrostatic Doping Method

P-type doping of wide-bandgap semiconductors has long been a challenging issue for the relatively large activation energy and strong compensation of acceptor states in these materials, which hinders their applications in ultraviolet (UV) optoelectronic devices drastically. Here we show that by emplo...

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Detalles Bibliográficos
Autores principales: Liu, X. Y., Shan, C. X., Zhu, H., Li, B. H., Jiang, M. M., Yu, S. F., Shen, D. Z.
Formato: Online Artículo Texto
Lenguaje:English
Publicado: Nature Publishing Group 2015
Materias:
Article
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC4555170/
https://www.ncbi.nlm.nih.gov/pubmed/26324054
http://dx.doi.org/10.1038/srep13641
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author Liu, X. Y.
Shan, C. X.
Zhu, H.
Li, B. H.
Jiang, M. M.
Yu, S. F.
Shen, D. Z.
author_facet Liu, X. Y.
Shan, C. X.
Zhu, H.
Li, B. H.
Jiang, M. M.
Yu, S. F.
Shen, D. Z.
author_sort Liu, X. Y.
collection PubMed
description P-type doping of wide-bandgap semiconductors has long been a challenging issue for the relatively large activation energy and strong compensation of acceptor states in these materials, which hinders their applications in ultraviolet (UV) optoelectronic devices drastically. Here we show that by employing electrostatic doping method, hole-dominant region can be formed in wide bandgap semiconductors, and UV lasing has been achieved through the external injection of electrons into the hole-dominant region, confirming the applicability of the p-type wide bandgap semiconductors realized via the electrostatic doping method in optoelectronic devices.
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spelling pubmed-45551702015-09-11 Ultraviolet Lasers Realized via Electrostatic Doping Method Liu, X. Y. Shan, C. X. Zhu, H. Li, B. H. Jiang, M. M. Yu, S. F. Shen, D. Z. Sci Rep Article P-type doping of wide-bandgap semiconductors has long been a challenging issue for the relatively large activation energy and strong compensation of acceptor states in these materials, which hinders their applications in ultraviolet (UV) optoelectronic devices drastically. Here we show that by employing electrostatic doping method, hole-dominant region can be formed in wide bandgap semiconductors, and UV lasing has been achieved through the external injection of electrons into the hole-dominant region, confirming the applicability of the p-type wide bandgap semiconductors realized via the electrostatic doping method in optoelectronic devices. Nature Publishing Group 2015-09-01 /pmc/articles/PMC4555170/ /pubmed/26324054 http://dx.doi.org/10.1038/srep13641 Text en Copyright © 2015, Macmillan Publishers Limited http://creativecommons.org/licenses/by/4.0/ This work is licensed under a Creative Commons Attribution 4.0 International License. The images or other third party material in this article are included in the article’s Creative Commons license, unless indicated otherwise in the credit line; if the material is not included under the Creative Commons license, users will need to obtain permission from the license holder to reproduce the material. To view a copy of this license, visit http://creativecommons.org/licenses/by/4.0/
spellingShingle Article
Liu, X. Y.
Shan, C. X.
Zhu, H.
Li, B. H.
Jiang, M. M.
Yu, S. F.
Shen, D. Z.
Ultraviolet Lasers Realized via Electrostatic Doping Method
title Ultraviolet Lasers Realized via Electrostatic Doping Method
title_full Ultraviolet Lasers Realized via Electrostatic Doping Method
title_fullStr Ultraviolet Lasers Realized via Electrostatic Doping Method
title_full_unstemmed Ultraviolet Lasers Realized via Electrostatic Doping Method
title_short Ultraviolet Lasers Realized via Electrostatic Doping Method
title_sort ultraviolet lasers realized via electrostatic doping method
topic Article
url https://www.ncbi.nlm.nih.gov/pmc/articles/PMC4555170/
https://www.ncbi.nlm.nih.gov/pubmed/26324054
http://dx.doi.org/10.1038/srep13641
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