Ultralow threading dislocation density in GaN epilayer on near-strain-free GaN compliant buffer layer and its applications in hetero-epitaxial LEDs

High threading dislocation (TD) density in GaN-based devices is a long unresolved problem because of the large lattice mismatch between GaN and the substrate, which causes a major obstacle for the further improvement of next-generation high-efficiency solid-state lighting and high-power electronics....

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Detalles Bibliográficos
Autores principales: Shih, Huan-Yu, Shiojiri, Makoto, Chen, Ching-Hsiang, Yu, Sheng-Fu, Ko, Chung-Ting, Yang, Jer-Ren, Lin, Ray-Ming, Chen, Miin-Jang
Formato: Online Artículo Texto
Lenguaje:English
Publicado: Nature Publishing Group 2015
Materias:
Article
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC4556983/
https://www.ncbi.nlm.nih.gov/pubmed/26329829
http://dx.doi.org/10.1038/srep13671

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC4556983/
https://www.ncbi.nlm.nih.gov/pubmed/26329829
http://dx.doi.org/10.1038/srep13671

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