Direct evidence on Ta-Metal Phases Igniting Resistive Switching in TaO(x) Thin Film

A Ta/TaO(x)/Pt stacked capacitor-like device for resistive switching was fabricated and examined. The tested device demonstrated stable resistive switching characteristics including uniform distribution of resistive switching operational parameters, highly promising endurance, and retention properti...

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Detalles Bibliográficos
Autores principales: Kyu Yang, Min, Ju, Hyunsu, Hwan Kim, Gun, Lee, Jeon-Kook, Ryu, Han-Cheol
Formato: Online Artículo Texto
Lenguaje:English
Publicado: Nature Publishing Group 2015
Materias:
Article
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC4568465/
https://www.ncbi.nlm.nih.gov/pubmed/26365532
http://dx.doi.org/10.1038/srep14053

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC4568465/
https://www.ncbi.nlm.nih.gov/pubmed/26365532
http://dx.doi.org/10.1038/srep14053

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