AlGaN/GaN Metal-Oxide-Semiconductor High-Electron-Mobility Transistor with Polarized P(VDF-TrFE) Ferroelectric Polymer Gating

Effect of a polarized P(VDF-TrFE) ferroelectric polymer gating on AlGaN/GaN metal-oxide-semiconductor high-electron-mobility transistors (MOS-HEMTs) was investigated. The P(VDF-TrFE) gating in the source/drain access regions of AlGaN/GaN MOS-HEMTs was positively polarized (i.e., partially positively...

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Detalles Bibliográficos
Autores principales: Liu, Xinke, Lu, Youming, Yu, Wenjie, Wu, Jing, He, Jiazhu, Tang, Dan, Liu, Zhihong, Somasuntharam, Pannirselvam, Zhu, Deliang, Liu, Wenjun, Cao, Peijiang, Han, Sun, Chen, Shaojun, Seow Tan, Leng
Formato: Online Artículo Texto
Lenguaje:English
Publicado: Nature Publishing Group 2015
Materias:
Article
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC4568540/
https://www.ncbi.nlm.nih.gov/pubmed/26364872
http://dx.doi.org/10.1038/srep14092

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC4568540/
https://www.ncbi.nlm.nih.gov/pubmed/26364872
http://dx.doi.org/10.1038/srep14092

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