Projected phase-change memory devices

Nanoscale memory devices, whose resistance depends on the history of the electric signals applied, could become critical building blocks in new computing paradigms, such as brain-inspired computing and memcomputing. However, there are key challenges to overcome, such as the high programming power re...

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Detalles Bibliográficos
Autores principales: Koelmans, Wabe W., Sebastian, Abu, Jonnalagadda, Vara Prasad, Krebs, Daniel, Dellmann, Laurent, Eleftheriou, Evangelos
Formato: Online Artículo Texto
Lenguaje:English
Publicado: Nature Pub. Group 2015
Materias:
Article
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC4569800/
https://www.ncbi.nlm.nih.gov/pubmed/26333363
http://dx.doi.org/10.1038/ncomms9181

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC4569800/
https://www.ncbi.nlm.nih.gov/pubmed/26333363
http://dx.doi.org/10.1038/ncomms9181

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