MOS-FET as a Current Sensor in Power Electronics Converters

This paper presents a current sensing principle appropriate for use in power electronics’ converters. This current measurement principle has been developed for metal oxide semiconductor field effect transistor (MOS-FET) and is based on [Formula: see text] voltage measurement. In practice, shunt resi...

Descripción completa

Detalles Bibliográficos
Autores principales: Pajer, Rok, Milanovič, Miro, Premzel, Branko, Rodič, Miran
Formato: Online Artículo Texto
Lenguaje:English
Publicado: MDPI 2015
Materias:
Article
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC4570307/
https://www.ncbi.nlm.nih.gov/pubmed/26213938
http://dx.doi.org/10.3390/s150818061

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC4570307/
https://www.ncbi.nlm.nih.gov/pubmed/26213938
http://dx.doi.org/10.3390/s150818061

Ejemplares similares