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MOS-FET as a Current Sensor in Power Electronics Converters
This paper presents a current sensing principle appropriate for use in power electronics’ converters. This current measurement principle has been developed for metal oxide semiconductor field effect transistor (MOS-FET) and is based on [Formula: see text] voltage measurement. In practice, shunt resi...
| Autores principales: | , , , |
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| Formato: | Online Artículo Texto |
| Lenguaje: | English |
| Publicado: |
MDPI
2015
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| Materias: | |
| Acceso en línea: | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC4570307/ https://www.ncbi.nlm.nih.gov/pubmed/26213938 http://dx.doi.org/10.3390/s150818061 |