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A New Silicon Phase with Direct Band Gap and Novel Optoelectronic Properties
Due to the compatibility with the well-developed Si-based semiconductor industry, there is considerable interest in developing silicon structures with direct energy band gaps for effective sunlight harvesting. In this paper, using silicon triangles as the building block, we propose a new silicon all...
| Autores principales: | , , , |
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| Formato: | Online Artículo Texto |
| Lenguaje: | English |
| Publicado: |
Nature Publishing Group
2015
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| Materias: | |
| Acceso en línea: | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC4585815/ https://www.ncbi.nlm.nih.gov/pubmed/26395926 http://dx.doi.org/10.1038/srep14342 |