In-plane tunnelling field-effect transistor integrated on Silicon

Silicon has persevered as the primary substrate of microelectronics during last decades. During last years, it has been gradually embracing the integration of ferroelectricity and ferromagnetism. The successful incorporation of these two functionalities to silicon has delivered the desired non-volat...

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Detalles Bibliográficos
Autores principales: Fina, Ignasi, Apachitei, Geanina, Preziosi, Daniele, Deniz, Hakan, Kriegner, Dominik, Marti, Xavier, Alexe, Marin
Formato: Online Artículo Texto
Lenguaje:English
Publicado: Nature Publishing Group 2015
Materias:
Article
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC4585907/
https://www.ncbi.nlm.nih.gov/pubmed/26403693
http://dx.doi.org/10.1038/srep14367

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC4585907/
https://www.ncbi.nlm.nih.gov/pubmed/26403693
http://dx.doi.org/10.1038/srep14367

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