Tunneling spectroscopy of close-spaced dangling-bond pairs in Si(001):H

We present a combined experimental and theoretical study of the electronic properties of close-spaced dangling-bond (DB) pairs in a hydrogen-passivated Si(001):H p-doped surface. Two types of DB pairs are considered, called “cross” and “line” structures. Our scanning tunneling spectroscopy (STS) dat...

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Detalles Bibliográficos
Autores principales: Engelund, Mads, Zuzak, Rafał, Godlewski, Szymon, Kolmer, Marek, Frederiksen, Thomas, García-Lekue, Aran, Sánchez-Portal, Daniel, Szymonski, Marek
Formato: Online Artículo Texto
Lenguaje:English
Publicado: Nature Publishing Group 2015
Materias:
Article
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC4585918/
https://www.ncbi.nlm.nih.gov/pubmed/26404520
http://dx.doi.org/10.1038/srep14496

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC4585918/
https://www.ncbi.nlm.nih.gov/pubmed/26404520
http://dx.doi.org/10.1038/srep14496

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