Phonon transport control by nanoarchitecture including epitaxial Ge nanodots for Si-based thermoelectric materials

Phonon transport in Si films was controlled using epitaxially-grown ultrasmall Ge nanodots (NDs) with ultrahigh density for the purpose of developing Si-based thermoelectric materials. The Si/Ge ND stacked structures, which were formed by the ultrathin SiO(2) film technique, exhibited lower thermal...

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Detalles Bibliográficos
Autores principales: Yamasaka, Shuto, Nakamura, Yoshiaki, Ueda, Tomohiro, Takeuchi, Shotaro, Sakai, Akira
Formato: Online Artículo Texto
Lenguaje:English
Publicado: Nature Publishing Group 2015
Materias:
Article
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC4592960/
https://www.ncbi.nlm.nih.gov/pubmed/26434678
http://dx.doi.org/10.1038/srep14490

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC4592960/
https://www.ncbi.nlm.nih.gov/pubmed/26434678
http://dx.doi.org/10.1038/srep14490

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