Enhancement of the Si p-n diode NIR photoresponse by embedding β-FeSi(2) nanocrystallites

By using solid phase epitaxy of thin Fe films and molecular beam epitaxy of Si, a p(+)-Si/p-Si/β-FeSi(2) nanocrystallites/n-Si(111) diode structure was fabricated. Transmission electron microscopy data confirmed a well-defined multilayered structure with embedded nanocrystallites of two typical size...

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Detalles Bibliográficos
Autores principales: Shevlyagin, A. V., Goroshko, D. L., Chusovitin, E. A., Galkin, K. N., Galkin, N. G., Gutakovskii, A. K.
Formato: Online Artículo Texto
Lenguaje:English
Publicado: Nature Publishing Group 2015
Materias:
Article
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC4593177/
https://www.ncbi.nlm.nih.gov/pubmed/26434582
http://dx.doi.org/10.1038/srep14795

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC4593177/
https://www.ncbi.nlm.nih.gov/pubmed/26434582
http://dx.doi.org/10.1038/srep14795

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