MBE Growth of AlN Nanowires on Si Substrates by Aluminizing Nucleation

By introducing an aluminization process to achieve nucleation of nanowires (NWs), spontaneous growth of AlN NWs on Si substrates has been realized by plasma-assisted molecular beam epitaxy. The AlN NWs are grown from the nuclei formed by the aluminization process, and the NW density and diameter can...

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Detalles Bibliográficos
Autores principales: E, Yanxiong, Hao, Zhibiao, Yu, Jiadong, Wu, Chao, Liu, Runze, Wang, Lai, Xiong, Bing, Wang, Jian, Han, Yanjun, Sun, Changzheng, Luo, Yi
Formato: Online Artículo Texto
Lenguaje:English
Publicado: Springer US 2015
Materias:
Nano Express
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC4593981/
https://www.ncbi.nlm.nih.gov/pubmed/26437653
http://dx.doi.org/10.1186/s11671-015-1083-0

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC4593981/
https://www.ncbi.nlm.nih.gov/pubmed/26437653
http://dx.doi.org/10.1186/s11671-015-1083-0

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