Large-Area Growth of Uniform Single-Layer MoS(2) Thin Films by Chemical Vapor Deposition

We report the largest-size thin films of uniform single-layer MoS(2) on sapphire substrates grown by chemical vapor deposition based on the reaction of gaseous MoO(3) and S evaporated from solid sources. The as-grown thin films of single-layer MoS(2) were continuous and uniform in thickness for more than 4 cm without the existence of triangular-shaped MoS(2) clusters. Compared to mechanically exfoliated crystals, the as-grown single-layer MoS(2) thin films possessed consistent chemical valence states and crystal structure along with strong photoluminescence emission and optical absorbance at high energy. These results demonstrate that it is possible to scale up the growth of uniform single-layer MoS(2) thin films, providing potentially important implications on realizing high-performance MoS(2) devices. ELECTRONIC SUPPLEMENTARY MATERIAL: The online version of this article (doi:10.1186/s11671-015-1094-x) contains supplementary material, which is available to authorized users.