Extremely large magnetoresistance in few-layer graphene/boron–nitride heterostructures

Understanding magnetoresistance, the change in electrical resistance under an external magnetic field, at the atomic level is of great interest both fundamentally and technologically. Graphene and other two-dimensional layered materials provide an unprecedented opportunity to explore magnetoresistan...

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Detalles Bibliográficos
Autores principales: Gopinadhan, Kalon, Shin, Young Jun, Jalil, Rashid, Venkatesan, Thirumalai, Geim, Andre K., Neto, Antonio H. Castro, Yang, Hyunsoo
Formato: Online Artículo Texto
Lenguaje:English
Publicado: Nature Pub. Group 2015
Materias:
Article
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC4595716/
https://www.ncbi.nlm.nih.gov/pubmed/26388149
http://dx.doi.org/10.1038/ncomms9337

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC4595716/
https://www.ncbi.nlm.nih.gov/pubmed/26388149
http://dx.doi.org/10.1038/ncomms9337

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